Name: GA10SICP12-263
Brand: GeneSiC Semiconductor
SKU: GA10SICP12-263
Price: 2.40 USD
Availability: InStock
Rating: 5 (2 reviews)

GA10SICP12-263 Specifications

Attributes: Property Value

Manufacturer:: GeneSiC Semiconductor

Series:: -

Package/Case:: TO-263-8, D2PAK (7 Leads + Tab), TO-263CA

Packaging:: Tube

Product Status:: Active

FET Type:: -

Technology:: SiC (Silicon Carbide Junction Transistor)

Drain to Source Voltage (Vdss):: 1200 V

Current - Continuous Drain (Id) @ 25°C:: 25A (Tc)

Drive Voltage (Max Rds On, Min Rds On):: -

Rds On (Max) @ Id, Vgs:: 100mOhm @ 10A

Vgs(th) (Max) @ Id:: -

Gate Charge (Qg) (Max) @ Vgs:: -

Vgs (Max):: -

Input Capacitance (Ciss) (Max) @ Vds:: 1403 pF @ 800 V

FET Feature:: -

Power Dissipation (Max):: 170W (Tc)

Operating Temperature:: 175°C (TJ)

Grade:: -

Qualification:: -

Mounting Type:: Surface Mount

Supplier Device Package:: TO-263-7

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GA10SICP12-263 FAQ

1. How to order GA10SICP12-263 on CEX ELECTRONICS LIMITED?

Currently, CEX ELECTRONICS LIMITED only provide peer-to-peer order processing. While you submit the RFQ, our professional agent will contact you with the competitive prices in the global market, and our agent will prompt you to finish the order if you accept our offers.

2. How does CEX ELECTRONICS LIMITED guarantee that GA10SICP12-263 is from the original manufacturer or authorized agents?

We have a professional and experienced quality control team to strictly verify and test the GA10SICP12-263. All suppliers must pass our qualification reviews before they can publish their products including GA10SICP12-263 on CEX ELECTRONICS LIMITED; we pay more attention to the channels and quality of GA10SICP12-263 products than any other customer. We strictly implement supplier audits, so you can purchase with confidence.

3. Are the GA10SICP12-263 price and inventory displayed accurate?

The price and inventory of GA10SICP12-263 fluctuates frequently and cannot be updated in time, it will be updated periodically within 24 hours. And, our quotation usually expires after 5 days.

4. What forms of payment are accepted?

Wire Transfer, PayPal, Alipay, Wechat, Credit Card, Western Union, MoneyGram, and Escrow are all acceptable.

Warm Tips: Some orders in certain payment forms may require handling fee.

5. How is the shipping arranged?

Customers can choose industry-leading freight companies, including DHL, UPS, FedEx, TNT, and Registered Mail. Shipping insurance is also available.

Once your order has been processed for shipment, our salesperson will send you an email advising you of the shipping status and tracking number.

Warm Tips: It may take up to 24 hours for the carriers to display tracking information. Usually, express delivery takes 3-5 days, and registered mail takes 25-60 days.

6. What is the process for return or replacement of GA10SICP12-263?

All goods will implement Pre-Shipment Inspection (PSI), selected at random from all batches of your order to do a systematic inspection before arranging the shipment. If there is something wrong with the GA10SICP12-263 we delivered, we will accept the replacement or return of the GA10SICP12-263 only when all of the below conditions are fulfilled:

(1)Such as a deficiency in quantity, delivery of wrong items, and apparent external defects (breakage and rust, etc.), and we acknowledge such problems.

(2)We are informed of the defect described above within 90 days after the delivery of GA10SICP12-263.

(3)The PartNo is unused and only in the original unpacked packaging.

Two processes to return the products:

(1)Inform us within 90 days

(2)Obtain Requesting Return Authorizations

7.How to contact us to get technical supports, such as GA10SICP12-263 pin diagram, GA10SICP12-263 datasheet?

If you need any after-sales service, please do not hesitate to contact us.

GA10SICP12-263 Product Comparison

Image
Part Number	GA10SICP12-263
Manufacturer	GeneSiC Semiconductor
Series	-
Package/Case	TO-263-8, D2PAK (7 Leads + Tab), TO-263CA
Packaging	Tube
Product Status	Active
FET Type	-
Technology	SiC (Silicon Carbide Junction Transistor)
Drain to Source Voltage (Vdss)	1200 V
Current - Continuous Drain (Id) @ 25°C	25A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-
Rds On (Max) @ Id, Vgs	100mOhm @ 10A
Vgs(th) (Max) @ Id	-
Gate Charge (Qg) (Max) @ Vgs	-
Vgs (Max)	-
Input Capacitance (Ciss) (Max) @ Vds	1403 pF @ 800 V
FET Feature	-
Power Dissipation (Max)	170W (Tc)
Operating Temperature	175°C (TJ)
Grade	-
Qualification	-
Mounting Type	Surface Mount
Supplier Device Package	TO-263-7